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TPW65R044MFD Datasheet(PDF) 4 Page - Wuxi Unigroup Microelectronics Company |
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TPW65R044MFD Datasheet(HTML) 4 Page - Wuxi Unigroup Microelectronics Company |
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4 / 8 page ![]() TPW65R044MFD Wuxi Unigroup Microelectronics Co.,Ltd V1.0 www.tsinghuaicwx.com 0 2 4 6 8 10 12 0 50 100 150 200 0 100 200 300 400 500 600 0.02 0.03 0.04 0.05 0.06 0 10 20 30 40 50 60 0 0.5 1 1.5 2 0 50 100 150 200 250 300 0 2 4 6 8 10 0 50 100 150 200 250 300 0 5 10 15 20 4 Typical Characteristics T J = 25º C, unless otherwise noted 104 102 101 102 101 100 10-1 Figure 1. Output Characteristics Figure 3. On-Resistance vs. Drain Current Figure 5. Gate Charge V DS, Drain-to-Source Voltage (V) I D, Drain Current (A) Q g, Total Gate Charge (nC) C iss C oss C rss T J = 125º C V DD = 120V T J = 25º C V GS = 0 f = 1MHz V DD = 520V T J = 25º C T J = 150º C V GS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics V DS = 20V Figure 4. Capacitance V GS = 10V T J = 25º C V DS, Drain-to-Source Voltage (V) Figure 6. Body Diode Forward Voltage 103 V SD, Source-to-Drain Voltage (V) 20V 10V 8V 7V 6V 5.5V 5V 105 |
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