8K X 8 BIT LOW POWER CMOS SRAM

DC ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

*5

MAX.

UNIT

Supply Voltage

V

5.

2.7

3.0

5

Input High Voltage

*1

V

-

c

c

V

*

7

.

0

CC

+0.3

V

Input Low Voltage

*2

V

6

.

0

-

5

.

0

-

Input Leakage Current

- 1

-

1

µA

Output Leakage

Current

Output Disabled

- 1

-

1

µA

Output High Voltage

V

-

0

.

3

4

.

2

A

m

1

-

=

Output Low Voltage

-

-

0.4

V

- 55

-

15

45

mA

Cycle time = Min.

Average Operating

Power supply Current

Cycle time = 1µs

-

3

10

mA

-C

1

50

*4

µA

Standby Power

Supply Current

CE#

V

or CE2≦0.2V

-I

-

1

80

*4

µA

Notes: C = Commercial Temperature I = Industrial temperature

CC

+ 3.0V for pulse width less than 10ns.

SS

- 3.0V for pulse

width less than10ns.

3. Over/Undershoot specificationsare characterized, not 10

0% tested.

4. 10µA for special request

5. Typical valuesare included forreference only and are notguaranteed or tested.

Typical valued are measured a

ºC

℃

= 1.0MHz)

PARAMETER

SYMBOL

MIN.

MAX

UNIT

Input Capacitance

-

6

pF

Input/Output Capacitance

-

8

pF

Note :These parameters areguaranteed by device characterization, but not p

roduction tested.

AC TEST CONDITIONS

V

o

t

V

2

.

0

s

l

e

v

e

L

e

s

l

u

P

t

u

p

n

I

CC

- 0.2V

s

n

3

s

e

m

i

T

ll

a

F

d

n

a

e

s

i

R

t

u

p

n

I

Input and Output Timing Reference Levels

1.5V

C

d

a

o

L

t

u

p

t

u

O

L

®

February 2007

AS6C6264

02/Feb/07, v1.0

Alliance Memory Inc

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