8K X 8 BIT LOW POWER CMOS SRAM

AC ELECTRICAL CHARACTERISTICS

(1) READ CYCLE

AS6C6264-55

PARAMETER

SYM.

MIN.

MAX.

UNIT

Read Cycle Time

55

-

ns

Address Access Time

-

55

ns

Chip Enable Access Time

-

55

ns

Output Enable Access Time

30

ns

Chip Enable to Output in Low-Z

10

-

ns

Output Enable to Output in Low-Z

5

-

ns

Chip Disable to Output in High-Z

-

20

ns

Output Disable to Output in High-Z

20

ns

Output Hold from Address Change

10

-

ns

(2) WRITE CYCLE

AS6C6264-55

PARAMETER

SYM.

MIN.

MAX.

UNIT

Write Cycle Time

55

-

ns

Address Valid to End of Write

50

-

ns

Chip Enable to End of Write

50

-

ns

Address Set-up Time

0

-

ns

Write Pulse Width

45

-

ns

Write Recovery Time

0

-

ns

Data to Write Time Overlap

25

-

ns

Data Hold from End of Write Time

0

-

ns

Output Active from End of Write

5

-

ns

Write to Output in High-Z

-

20

ns

*These parameters are guaranteed by device characterization, but not production tested.

®

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