®

32K X 8 BIT LOW POWER CMOS SRAM

DC ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

*5

MAX.

UNIT

Supply Voltage

V

5

.

5

3

.

3

7

.

2

Input High Voltage

V

-

c

c

V

*

7

.

0

CC

+0.5

V

Input Low Voltage

V

6

.

0

-

5

.

0

-

Input Leakage Current

- 1

-

1

µA

Output Leakage

Current

Output Disabled

- 1

-

1

µA

Output High Voltage

2.4

3.0

-

V

Output Low Voltage

-

-

0.4

V

-55

-

15

45

mA

Cycle time = Min.

.

Average Operating

Power supply Current

Cycle time = 1µs

-

3

10

mA

A

m

3

1

-

-C

-

1

µA

Standby Power

Supply Current

CE# V

- 0.2V

-I

-

1

µA

Notes: C = Commercial Temperature I = Industrial Temperature

3. Over/Undershoot specifications are characterized, not 100% tested.

4. 10µA for special request

5. Typical values are included for reference only and are not guaranteed or tested.

℃

= 1.0MHz)

PARAMETER

SYMBOL

MIN.

MAX

UNIT

Input Capacitance

-

6

pF

Input/Output Capacitance

-

8

pF

Note : These parameters are guaranteed by device characterization, but not production tested.

AC TEST CONDITIONS

V

o

t

V

2

.

0

s

l

e

v

e

L

e

s

l

u

P

t

u

p

n

I

CC

- 0.2V

s

n

3

s

e

m

i

T

ll

a

F

d

n

a

e

s

i

R

t

u

p

n

I

Input and Output Timing Reference Levels

1.5V

C

d

a

o

L

t

u

p

t

u

O

L

February 2007

AS6C62256

02/FEB/07, v1.0

Alliance Memory Inc.

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