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FAP-450 Datasheet(PDF) 2 Page - Fuji Electric

Part # FAP-450
Description  N-channel MOS-FET(500V, 0,38廓, 14A, 190W)
PDF  3 Pages
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Manufacturer  FUJI [Fuji Electric]
Direct Link  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

FAP-450 Datasheet(HTML) 2 Page - Fuji Electric

  FAP-450 Datasheet HTML 1Page - Fuji Electric FAP-450 Datasheet HTML 2Page - Fuji Electric FAP-450 Datasheet HTML 3Page - Fuji Electric  
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N-channel MOS-FET
FAP-450
500V
0,38Ω 14A 190W
FAP-IIS Series
> Characteristics
Typical Output Characteristics
Drain-Source-On-State Resistance vs. Tch
Typical Transfer Characteristics
↑
ID=f(VDS); 80µs pulse test; TC=25°C
↑
RDS(on) = f(Tch); ID=8A; VGS=10V; 80µs pulse test
↑
ID=f(VGS); 80µs pulse test;VDS=25V; Tch=25°C
1
2
3
VDS [V]
→
Tch [°C]
→
VGS [V]
→
Typical Drain-Source-On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
↑
RDS(on)=f(ID); 80µs pulse test; TC=25°C
↑
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
↑
VGS(th)=f(Tch); ID=250µA; VDS=VGS
4
5
6
ID [A]
→
ID [A]
→
Tch [°C]
→
Max. Avalanche Energy Derating
Typical Capacitances vs. VDS
vs. Starting Channel Temperature
Forward Characteristics of Reverse Diode
↑
C=f(VDS); VGS=0V; f=1MHz
↑
Eas=f(starting Tch): Peak IL = 14A; VCC=50V
↑
IF=f(VSD); 80µs pulse test; VGS=0V
7
8
9
VDS [V]
→
Starting Tch [°C]
→
VSD [V]
→
Allowable Power Dissipation vs. TC
Safe Operation Area
PD=f(Tc)
ID=f(VDS): Single Pulse, Tc=25°C
Transient Thermal impedance
Zth(ch-c=f(t); D=t/T
↑
10
↑
12
↑
Zthch=f(t) parameter:D=t/T
Tc [°C]
→
VDS [V]
→
t [s]
→
This specification is subject to change without notice!



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