FAP-450 datasheet(1/3 Pages) FUJI

Part #	FAP-450

Description	N-channel MOS-FET(500V, 0,38廓, 14A, 190W)

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	FUJI [Fuji Electric]

Direct Link	http://www.fujielectric.co.jp/eng/fdt/scd

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1 / 3 page

FAP-450

N-channel MOS-FET

FAP-IIS Series

500V

0,38Ω 14A 190W

> Features

> Outline Drawing

-

High Speed Switching

-

Low On-Resistance

-

No Secondary Breakdown

-

Low Driving Power

-

High Voltage

-

VGS = ± 30V Guarantee

-

Repetitive Avalanche Rated

> Applications

-

Switching Regulators

-

UPS

-

DC-DC converters

-

General Purpose Power Amplifier

> Maximum Ratings and Characteristics

> Equivalent Circuit

-

Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item

Symbol

Rating

Unit

Drain-Source-Voltage

V DS

500

V

Continous Drain Current

I D

14

A

Pulsed Drain Current

I D(puls)

56

A

Gate-Source-Voltage

V GS

±30

V

Avalanche Current

I AR

14

*2

A

Maximum Avalanche Energy

E AS

760

*1

mJ

Max. Power Dissipation

P D

190

W

Operating and Storage Temperature Range

T ch

150

°C

T stg

-55 ~ +150

°C

*1) VCC = 50V; L = 7mH; IAS = 14A; RG = 50

Ω; Starting T

ch = 25°C (See Fig. 1 & 2)

*2) Repetitive Rating : Pulse Width limited by max. Channel Temperature

-

Electrical Characteristics (TC=25°C), unless otherwise specified

Item

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown-Voltage

BV DSS

ID=1mA

VGS=0V

500

V

Gate Threshhold Voltage

V GS(th)

ID=250µA

VDS=VGS

3,0

4,0

V

Zero Gate Voltage Drain Current

I DSS

VDS=500V

Tch=25°C

25

µA

VGS=0V

Tch=125°C

1,0

mA

Gate Source Leakage Current

I GSS

VGS=±30V

VDS=0V

10

100

nA

Drain Source On-State Resistance

R DS(on)

ID=8A

VGS=10V

0,32

0,38

Ω

Forward Transconductance

g fs

ID=8A

VDS=25V

7

14

S

Input Capacitance

C iss

VDS=25V

2200

pF

Output Capacitance

C oss

VGS=0V

330

pF

Reverse Transfer Capacitance

C rss

f=1MHz

140

pF

Turn-On-Time ton (ton=td(on)+tr)

t d(on)

VCC=250V

18

ns

t r

VGS=10V

70

ns

Turn-Off-Time toff (ton=td(off)+tf)

t d(off)

RG = 6,1W

130

ns

t f

RD = 20

Ω

70

ns

Avalanche Capability

I AV

L = 100µH

Tch=25°C

4

A

Total Gate Charge

C iss

VCC=400V

170

nC

Gate-Source Charge

C oss

VGS=10V

20

nC

Gate-Drain Charge

C rss

ID = 14A

90

nC

Diode Forward On-Voltage

V SD

IF=2xIDR VGS=0V Tch=25°C

1,0

1,5

V

Reverse Recovery Time

t rr

IF=IDR VGS=0V

700

ns

Reverse Recovery Charge

Q rr

-dIF/dt=100A/µs Tch=25°C

9,0

µC

-

Thermal Characteristics

Item

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Thermal Resistance

R th(ch-a)

channel to ambient

35

°C/W

R th(ch-c)

channel to case

0,65

°C/W

Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

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