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TS8405P Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS8405P Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 12 page  Electrical Characteristics TA=25°C unless otherwise specified PRELIMINARY DATA SHEET 2 IDSS Zero Gate Voltage Drain Current VDS=-12V, VGS=0V -1 µA Zero Gate Voltage Drain Current VDS=-12V, VGS=0V, T=70°C -5 µA IGSS Gate-Body Leakage VGS=±8V, VDS=0V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -0.7 V Drain-Source On-State Resistance VGS=-4.5V, ID=-1A 50 mΩ Drain-Source On-State Resistance VGS=-2.5V, ID=-1A 70 mΩ Drain-Source On-State Resistance VGS=-1.8V, ID=-1A 90 mΩ Ciss Input Capacitance VDS=-12V, VGS=0V, F=1MHZ 800 pF Coss Output Capacitance VDS=-12V, VGS=0V, F=1MHZ 250 pF Crss Reverse Transfer Capacitance VDS=-12V, VGS=0V, F=1MHZ 100 pF Qg Total Gate Charge VGS=-4.5V, ID=-1A, VDS=-6V 9.0 nC VSD Diode Forward Voltage IS=-1A, VGS=0V -0.71 V trr Source-Drain Reverse Recovery Time IS=-1A, VGS=0V, di/dt=100A/µs 40 ns rDS(on) 9/14/03 Rev5 |
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