General purpose medium power amplifier or switch in bare die form

Complement PNP 2N4033

Rev 1.0

21/10/24

NPN Transistor Bare Die, 2N3020

Features:

Die Dimensions in µm (mils)

700 (27.56)

200

(7.87)

200

(7.87)

B

E



Collector current up to 1A



Low Leakage Current & Saturation Voltage



Characterized at temperature extremes



High Reliability Gold Back Metal



High Reliability tested grades for Military + Space

Ordering Information:

The following part suffixes apply:



No suffix - MIL-STD-750 /2072 Visual Inspection



“H” - MIL-STD-750 /2072 Visual Inspection

+ MIL-STD-38534 Class H LAT



“K” - MIL-STD-750 /2072 Visual Inspection

+ MIL-STD-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

E = EMITTER B = BASE

DIE BACK = COLLECTOR

Supply Formats:

Mechanical Specification



Default – Die in Waffle Pack (400 per tray capacity)



Sawn Wafer on Tape – Specific request



Unsawn Wafer – Specific request



With additional electrical selection – Specific request



Sawn as pairs or adjacent pair pick – Specific request

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Die Size

(Excluding Saw Street)

700 x 700

27.56 x 27.56

µm

mils

Base & Emitter Pad Size

200 x 150

7.87 x 5.90

µm

mils

Die Thickness

180 (±20)

7.09 (±0.79)

µm

mils

Top Metal Composition

Al - 3µm

Back Metal Composition

Au - 0.9µm