Electronic Components Datasheet Search
  English  ▼

X  

2N3020 Datasheet(PDF) 2 Page - Silicon Supplies

Part # 2N3020
Description  NPN Transistor Bare Die
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SS [Silicon Supplies]
Direct Link  https://siliconsupplies.com/
Logo SS - Silicon Supplies

2N3020 Datasheet(HTML) 2 Page - Silicon Supplies

  2N3020 Datasheet HTML 1Page - Silicon Supplies 2N3020 Datasheet HTML 2Page - Silicon Supplies 2N3020 Datasheet HTML 3Page - Silicon Supplies  
Zoom Inzoom in Zoom Outzoom out
 2 / 3 page
background image
Absolute Maximum Ratings1 T
A = 25°C unless otherwise stated
Rev 1.0
21/10/24
NPN Transistor Bare Die, 2N3020
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
140
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
IC
1
A
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
-55 to 150
°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
2
V(BR)CBO
IC = 100µA, IE = 0
140
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 30mA, IB = 0
80
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 100µA, IC = 0
7
-
-
V
VCB = 90V, IE = 0
-
-
0.01
µA
Collector Cut-off Current
ICBO
Electrical Characteristics T
A = 25°C unless otherwise stated
VCB = 90V, IE = 0, TA = 150°C
3
-
-
10
µA
Emitter Cut-off Current
IEBO
VEB = 5V, IC = 0
-
-
0.01
µA
ON CHARACTERISTICS
VCE = 10V, IC = 0.1mA
30
-
200
-
VCE = 10V, IC = 10mA
40
-
200
-
VCE = 10V, IC = 150mA
40
-
200
-
VCE = 10V, IC = 500mA
2
30
-
120
-
Forward-Current Transfer Ratio
hFE
VCE = 10V, IC = 1A
2
15
-
-
-
IC = 150mA, IB = 15 mA
-
-
0.2
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 500mA, IB = 50mA
-
-
0.5
V
IC = 10mA, IB = 1mA
-
-
1.1
V
Base-Emitter Saturation Voltage
VBE(sat)
IC = 150mA, IB = 15mA
-
-
1.1
V
SMALL SIGNAL CHARACTERISTICS
3
Current Gain – Bandwidth Product
fT
VCE = 10V, IC = 50mA, f = 20MHz
100
-
-
MHz
Output Capacitance
Cobo
VCB = 10V, IE = 0, f = 1MHz
-
-
12
Input Capacitance
Cibo
VBE = 0.5V, IC = 0, f = 1MHz
-
-
60
pF
Small-Signal Current Gain
hfe
VCE = 5V, IC = 1mA, f = 1MHz
80
-
400
Collector Base Time Constant
rb’Cc
VCB = 10V, IE = 10mA, f = 4MHz
-
-
400
pS
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. Pulse Test:
Pulse Width ≤ 300 µs, Duty Cycle ≤ 1% 3. Not production testing in die form, characterized by chip design and package verification
Page 2 of 3
www.siliconsupplies.com



Html Pages

1 2 3


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com