Nexperia

PDTC144WM

50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

VCE = 30 V; IB = 0 A; Tamb = 25 °C

-

-

100

nA

ICEO

collector-emitter cut-off

current

VCE = 30 V; IB = 0 A; Tj = 150 °C

-

-

5

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

110

µA

hFE

DC current gain

VCE = 5 V; IC = 5 mA; Tamb = 25 °C

60

-

-

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C

-

-

150

mV

VI(off)

off-state input voltage

VCE = 5 V; IC = 100 µA; Tamb = 25 °C

-

1.7

1.2

V

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 2 mA; Tamb = 25 °C

4

2.7

-

V

R1

bias resistor 1 (input)

33

47

61

kΩ

R2/R1

bias resistor ratio

Tamb = 25 °C

0.37

0.47

0.57

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

-

2.5

pF

11. Package outline

03-04-03

Dimensions in mm

0.62

0.55

0.55

0.47

0.50

0.46

0.65

0.20

0.12

3

2

1

0.30

0.22

0.30

0.22

1.02

0.95

0.35

Fig. 1. Package outline DFN1006-3 (SOT883)

PDTC144WM

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© Nexperia B.V. 2024. All rights reserved

Product data sheet

18 October 2024

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