ADM4040Z datasheet(2/6 Pages) ADV

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ADM4040Z

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www.advsemi.com

Feb,2018 -Rev.1.01

ADV

Electrical Characteristics (TA=25°C Unless Otherwise Noted)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

On/off

Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250uA

IDSS

Zero Gate Voltage Drain Current

VDS= 40V, VGS=0V TJ=25°C

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250uA

1.1

1.6

2.4

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

100

RDS(ON)

Drain-SourceOn-stateResistance⑵

VGS= 10V, IDS=30A

5.5



VGS= 4.5V, IDS=20A

Dynamic Characteristics

Ciss

Input Capacitance

VGS=0V,

VDS= 20V,

Frequency=1.0MHz

980

Coss

Output Capacitance

160

Crss

Reverse Transfer Capacitance

Switching Characteristics

td(ON)

Turn-on Delay Time⑴

VDD=20V,

ID= 20A, VGS= 10V,

RGEN=4.7Ω

Turn-on Rise Time⑴

td(OFF)

Turn-off Delay Time⑴

Turn-off Fall Time⑴

Total Gate Charge⑴

VDS=32V, VGS= 10V,

IDS=20A

Qgs

Gate-Source Charge⑴

2.5

Qgd

Gate-Drain Charge⑴

Avalanche Characteristics

EAS

Single Pulse Avalanche Energy

（

3）

VDD=24V,L=0.5mH ,VGS=10

V,Rg=50Ω, IAS=13A

TJ=25°C

Diode Characteristics

VSD

Diode Forward Voltage⑵

ISD = 20A, VGS = 0 ,TJ=25°C

1.2

NOTES:

1. Surface Mounted on FR4 Board, t ≤ 10 sec.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The Min. value is 100% EAS tested guarantee.

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