ADM4040Z

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www.advsemi.com

Feb,2018 -Rev.1.01

ADV

N-Channel Enhancement Mode Field Effect Transistor

PRODUCT SUMMARY

Features:

●

Low Gate Charge for Fast Switching Application

●

Low RDS(ON) to Minimize Conductive Loss

●

100% EAS Guaranteed

●

Optimized V(BR)DSS Ruggedness

●

Green Device Available

Description:

The ADM4040Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be

used in a wide variety of applications.

Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )

Symbol

Parameter

Ratings

Unit

Common Ratings

VDSS

Drain-Source Voltage

40

V

VGSS

Gate-Source Voltage

±

20

TJ

Maximum Junction Temperature

150

°C

TSTG

Storage Temperature Range

-55 to150

°C

IS

Diode Continuous Forward Current

TC =25°C

40

A

Mounted on Large Heat Sink

IDM

300μs Pulse Drain Current Tested

（

2）

TC=25°C, VGS=10V

120

A

ID

Continuous Drain Current

（

1）

TC=25°C, VGS=10V

40

A

TC=100°C VGS=10V

32

A

PD

Maximum Power Dissipation

TC=25°C

65

W

Thermal Characteristics

Symbol

Parameter

Ratings

Unit

RthJC

Thermal resistance junction-case max

（

1）

1.92

°C/W

RthJA

Thermal resistance junction-ambient max

（

1）

30

°C/W

VDSS

ID

RDS(ON) (mΩ)

40V

40A

5.5mΩ

PDFN（3X3）

DD

D

D

SS

S

G