BC808 datasheet(2/2 Pages) DIOTEC

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BC807 / BC808

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

- VCE = 1 V, - IC = 500 mA

- VBE

–

1.2 V

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 20 V, (E open)

- VCB = 20 V, Tj = 125°C, (E open)

- ICB0

–

100 nA

5 µA

Emitter-Base cutoff current – Emitter-Basis-Reststrom

- VEB = 4 V, (C open)

- IEB0

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

- VCE = 5 V, - IC = 10 mA, f = 50 MHz

–

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

–

12 pF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 420 K/W 1)

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

BC817 / BC818

Marking of available current gain groups per type

Stempelung der lieferbaren Stromverstärkungsgruppen pro

Typ

BC807-16 = 5A or 5CR

BC807-25 = 5B or 5CS

BC807-40 = 5C or 5CT

BC808-16 = 5E or 5CR

BC808-25 = 5F or 5CS

BC808-40 = 5G or 5CT

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

[%]

tot

120

100

[°C]

150

100

Power dissipation versus ambient temperature )

Verlustleistung in Abh. von d. Umgebungstemp. )

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