8-9

8

TO-92

BV

I

DSS

(max)

(min)

TO-92

Die

240V

4.0Ω

600mA

DN2624N3

DN2624ND

Advanced DMOS Technology

These low threshold depletion-mode (normally-on) transistors

utilize an advanced vertical DMOS structure and Supertex’s

well-proven silicon-gate manufacturing process. This combina-

tion produces devices with the power handling capabilities of

bipolar transistors and with the high input impedance and posi-

tive temperature coefficient inherent in MOS devices. Character-

istic of all MOS structures, these devices are free from thermal

runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Ordering Information

N-Channel Depletion-Mode

Vertical DMOS FETs

Applications

Normally-on switches

Solid state relays

Converters

Linear amplifiers

Constant current sources

Power supply circuits

Telecom

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

BV

DGX

Gate-to-Source Voltage

± 20V

Operating and Storage Temperature

-55°C to +150°C

Soldering Temperature*

300°C

Features

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Order Number / Package

Package Options

Note: See Package Outline section for dimensions.

DN2624

S G D

– OBSOLETE

–