DN3525

Features

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Applications

Normally-on switches

Solid state relays

Converters

Constant current sources

Power supply circuits

Telecom

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General Description

The Supertex DN3525 is a low threshold depletion-mode

(normally-on)

transistor

utilizing

an

advanced

vertical

DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device

with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Absolute Maximum Ratings

Parameter

Value

Drain-to-source voltage

BV

DSX

Drain-to-gate voltage

BV

DGX

Gate-to-source voltage

±20V

Operating and storage temperature

Soldering temperature*

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

*Distance of 1.6mm from case for 10 seconds.

Ordering Information

BV

BV

DGX

R

DS(ON)

(max)

I

DSS

(min)

Package Options

250V

6.0Ω

300mA

DN3525N8

DN3525N8-G

-G indicates package is RoHS compliant (‘Green’)

N-Channel Depletion-Mode Vertical DMOS FETs

Pin Configuration

TO-243AA

(top view)

G

D

S

D

Product marking for TO-243AA:

where

= 2-week alpha date code

DN5C