DN3765

Features

High input impedance

Low input capacitance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Applications

Normally-on switches

Solid state relays

Converters

Linear amplifiers

Constant current sources

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General Description

This depletion-mode (normally-on) transistor utilizes an

advanced vertical DMOS structure and Supertex’s well-

proven silicon-gate manufacturing process. This combination

produces a device with the power handling capabilities of

bipolar transistors and with the high input impedance and

positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

N-Channel Depletion-Mode

Vertical DMOS FET

Absolute Maximum Ratings

Parameter

Value

Drain-to-source voltage

BV

DSX

Drain-to-gate voltage

BV

DGX

Gate-to-source voltage

±20V

Operating and storage temperature

Maximum junction temperature

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Ordering Information

BV

BV

DGX

(V)

R

DS(ON)

max

(Ω)

I

DSS

min

(mA)

Package Option

TO-252 (D-PAK)

650

8.0

200

DN3765K4-G

-G indicates package is RoHS compliant (‘Green’)

Pin Configuration

Product Marking

YY = Year Sealed

WW = Week Sealed

L = Lot Number

= “Green” Packaging

YYWW

DN3765

LLLLLLL

TO-252 (D-PAK) (K4)

GATE

SOURCE

DRAIN

TO-252 (D-PAK) (K4)