2

DN3765

Sym

Parameter

Min

Typ

Max

Units

Conditions

BV

DSX

Drain-to-source breakdown voltage

650

-

-

V

V

V

GS(OFF)

Gate-to-source OFF voltage

-1.5

-

-3.5

V

V

ΔV

GS(OFF)

Change in V

-

-

4.5

I

GSS

Gate body leakage current

-

-

100

nA

V

I

D(OFF)

Drain-to-source leakage current

-

-

10

µA

V

-

-

1.0

mA

V

T

I

DSS

Saturated drain-to-source current

200

-

-

mA

V

R

DS(ON)

Static drain-to-source on-state resistance

-

-

8.0

Ω

V

ΔR

DS(ON)

Change in R

-

-

1.1

G

FS

Forward transductance

100

-

-

mmho

I

C

ISS

Input capacitance

-

-

825

pF

V

V

f = 1.0MHz

C

OSS

Common source output capacitance

-

-

190

C

RSS

Reverse transfer capacitance

-

-

110

t

d(ON)

Turn-ON delay time

-

-

50

ns

V

I

R

t

r

Rise time

-

-

75

t

d(OFF)

Turn-OFF delay time

-

-

75

t

f

Fall time

-

-

100

V

SD

Diode forward voltage drop

-

-

1.8

V

V

t

rr

Reverse recovery time

-

800

-

ns

V

Notes:

(2) All A.C. parameters sample tested.

Notes:

(1) I

(2) Mounted on FR4 board, 25mm x 25mm x 1.57mm.

Thermal Characteristics

Package

I

D

(A)

I

D

(pulsed)

(A)

@T

(W)

θ

jc

θ

ja

I

DR

(1)

(A)

I

DRM

(A)

TO-252

(D-PAK)

0.30

0.50

2.5

6.25

50

0.30

0.50

Switching Waveforms and Test Circuit

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

0V

V

DD

0V

-10V