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C8051F331 Datasheet(PDF) 65 Page - Silicon Laboratories |
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C8051F331 Datasheet(HTML) 65 Page - Silicon Laboratories |
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65 / 216 page ![]() Rev. 1.5 65 C8051F330/1/2/3/4/5 Table 7.1. Voltage Reference Electrical Characteristics VDD = 3.0 V; –40 to +85 °C unless otherwise specified. Parameter Conditions Min Typ Max Units Internal Reference (REFBE = 1) Output Voltage 25 °C ambient 2.38 2.44 2.50 V VREF Short-Circuit Current — — 10 mA VREF Temperature Coefficient — 15 — ppm/°C Load Regulation Load = 0 to 200 µA to AGND — 0.5 — ppm/µA VREF Turn-on Time 1 4.7 µF tantalum, 0.1 µF ceramic bypass — 2 — ms VREF Turn-on Time 2 0.1 µF ceramic bypass — 20 — µs VREF Turn-on Time 3 no bypass cap — 10 — µs Power Supply Rejection — 140 — ppm/V External Reference (REFBE = 0) Input Voltage Range 0 — VDD V Input Current Sample Rate = 200 ksps; VREF = 3.0 V — 12 — µA Power Specifications ADC Bias Generator BIASE = ‘1’ or AD0EN = ‘1’ or IOSCEN = ‘1’ — 100 — µA Reference Bias Generator REFBE = ‘1’ or TEMPE = ‘1’ or IDA0EN = ‘1’ — 40 — µA |
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