TP2510

Features

Low threshold — -2.4V max.

High input impedance

Low input capacitance — 125pF max.

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Complementary N and P-channel devices

Applications

Logic level interfaces — ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

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General Description

These low threshold enhancement-mode (normally-off) tran-

sistors utilize a vertical DMOS structure and Supertex’s well-

proven silicon-gate manufacturing process. This combination

produces devices with the power handling capabilities of bipolar

transistors and with the high input impedance and positive

temperature coefficient inherent in MOS devices. Characteristic

of all MOS structures, these devices are free from thermal

runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

widerange of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Switching Waveforms and Test Circuit

Low Threshold

P-Channel Enhancement Mode

Vertical DMOS FETs

Thermal Characteristics

Package

I

D

(mA)

I

D

pulsed

(A)

Power Dissipation

@ T

(W)

θ

jc

θ

jc

I

DR

†

(mA)

I

DRM

(A)

TO-243AA

-480

-2.5

15

-480

-2.5

† I

‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

Output

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

0V

V

DD

0V

-10V