Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications. (T

A

=

25˚C)

LM3046

Each

Total

Units

Transistor

Package

Power Dissipation:

T

A = 25˚C

300

750

mW

T

A = 25˚C to 55˚C

300

750

mW

T

A > 55˚C

Derate at 6.67

mW/˚C

T

A = 25˚C to 75˚C

mW

T

A > 75˚C

mW/˚C

Collector to Emitter Voltage, V

CEO

15

V

Collector to Base Voltage, V

CBO

20

V

Collector to Substrate Voltage, V

CIO (Note 2)

20

V

Emitter to Base Voltage, V

EBO

5V

Collector Current, I

C

50

mA

Operating Temperature Range

−40˚C to +85˚C

Storage Temperature Range

−65˚C to +85˚C

Soldering Information

Dual-In-Line Package Soldering (10 Sec.)

260˚C

Small Outline Package

Vapor Phase (60 Seconds)

215˚C

Infrared (15 Seconds)

220˚C

See AN-450 “Surface Mounting Methods and Their Effect on

Product Reliability” for other methods of soldering surface

mount devices.

Electrical Characteristics

(T

A = 25˚C unless otherwise specified)

Parameter

Conditions

Limits

Units

Min

Typ

Max

Collector to Base Breakdown Voltage (V

(BR)CBO)IC = 10 µA, IE = 0

20

60

V

Collector to Emitter Breakdown Voltage (V

(BR)CEO)IC = 1 mA, IB = 0

15

24

V

Collector to Substrate Breakdown

I

C = 10 µA, ICI = 0

20

60

V

Voltage (V

(BR)CIO)

Emitter to Base Breakdown Voltage (V

(BR)EBO)IE 10 µA, IC =0

5

7

V

Collector Cutoff Current (I

CBO)VCB = 10V, IE = 0

0.002

40

nA

Collector Cutoff Current (I

CEO)VCE = 10V, IB = 0

0.5

µA

Static Forward Current Transfer

V

CE =3V

I

C =10mA

100

Ratio (Static Beta) (h

FE)IC =1mA

40

100

I

C =10µA

54

Input Offset Current for Matched

V

CE = 3V, IC = 1 mA

0.3

2

µA

Pair Q

1 and Q2 |IO1 −IIO2|

Base to Emitter Voltage (V

BE)VCE =3V

I

E = 1 mA

0.715

V

I

E = 10 mA

0.800

Magnitude of Input Offset Voltage for

V

CE = 3V, IC = 1 mA

0.45

5

mV

Differential Pair |V

BE1 −VBE2|

Magnitude of Input Offset Voltage for Isolated

Transistors |V

BE3 −VBE4|, |VBE4 −VBE5|,

|V

BE5 −VBE3|

V

CE = 3V, IC = 1 mA

0.45

5

mV