Electrical Characteristics (Continued)

(T

A = 25˚C unless otherwise specified)

Parameter

Conditions

Limits

Units

Min

Typ

Max

Temperature Coefficient of Base to

Emitter Voltage

V

CE = 3V, IC = 1 mA

−1.9

mV/˚C

Collector to Emitter Saturation Voltage (V

CE(SAT))IB = 1 mA, IC = 10 mA

0.23

V

Temperature Coefficient of

Input Offset Voltage

V

CE = 3V, IC = 1 mA

1.1

µV/˚C

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is

functional, but do not guarantee specific performance limits.

Note 2: The collector of each transistor is isolated from the substrate by an integral diode. The substrate (terminal 13) must be connected to the most negative point

in the external circuit to maintain isolation between transistors and to provide for normal transistor action.

Electrical Characteristics

Parameter

Conditions

Min

Typ

Max

Units

Low Frequency Noise Figure (NF)

f = 1 kHz, V

CE = 3V,

3.25

dB

I

C = 100 µA, RS =1k

Ω

LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS

Forward Current Transfer Ratio (h

fe)

f = 1 kHz, V

CE = 3V,

110

I

C =1mA

Short Circuit Input Impednace (h

ie)

3.5

k

Ω

Open Circuit Output Impedance (h

oe)

15.6

µmho

Open Circuit Reverse Voltage Transfer Ratio (h

re)

1.8x10

−4

ADMITTANCE CHARACTERISTICS

Forward Transfer Admittance (Y

fe)

f = 1 MHz, V

CE = 3V,

31 − j 1.5

Input Admittance (Y

ie)IC = 1 mA

0.3+J 0.04

Output Admittance (Y

oe)

0.001+j 0.03

Reverse Transfer Admittance (Y

re)

See Curve

Gain Bandwidth Product (f

T)VCE = 3V, IC = 3 mA

300

550

Emitter to Base Capacitance (C

EB)VEB = 3V, IE = 0

0.6

pF

Collector to Base Capacitance (C

CB)VCB = 3V, IC = 0

0.58

pF

Collector to Substrate Capacitance (C

CI)VCS = 3V, IC = 0

2.8

pF