OP177–SPECIFICATIONS

REV. B

–4–

ELECTRICAL CHARACTERISTICS

OP177E

OP177F

OP177G

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Units

Input Offset Voltage

VOS

10

20

15

40

20

100

µV

Average Input Offset

Voltage Drift

TCVOS

(Note 1)

0.03

0.1

0.1

0.3

0.7

1.2

µV/°C

Input Offset Current

IOS

0.5

1.5

0.5

2.2

0.5

4.5

nA

Average Input Offset

Current Drift

TCIOS

(Note 2)

1.5

25

1.5

40

1.5

85

pA/

°C

Input Bias Current

IB

–0.2

2.4

4

–0.2

2.4

4

2.4

±6.0

nA

Average Input Bias

Current Drift

TCIB

(Note 2)

8

25

8

40

15

60

pA/

°C

Input Voltage Range

IVR

(Note 3)

±13

±13.5

±13

±13.5

±13.0

±13.5

V

Common-Mode

Rejection Ratio

CMRR

VCM = ± 13 V

120

140

120

140

110

140

dB

Power Supply Rejection

Ratio

PSRR

VS = ± 3 V to ± 18 V

120

125

110

120

106

115

dB

Large-Signal

Voltage Gain

AVO

RL ≥ 2 kΩ, VO = ± 10 V

4

2000

6000

2000

6000

1000

4000

V/mV

Output Voltage Swing

VO

RL ≥ 2 kΩ± 12

±13.0

±12

±13.0

±12.0

±13.0

V

Power Consumption

PD

VS = ± 15 V, No Load

60

75

60

75

60

75

mW

Supply Current

ISY

VS = ± 15 V, No Load

2.0

2.5

2.0

2.5

2.0

2.5

mA

NOTES

1OP177E: TCV

OS is 100% tested.

2Guaranteed by endpoint limits.

3Guaranteed by CMRR test condition.

4To insure high open-loop gain throughout the

± 10 V output range, A

VO is tested at –10 V ≤ VO ≤ 0 V, 0 V ≤ VO ≤ +10 V, and –10 V ≤ VO ≤ +10 V.

Specifications subject to change without notice.

Figure 2. Typical Offset Voltage Test Circuit

Figure 3. Optional Offset Nulling Circuit

(@ VS =

15 V, –40

°C ≤ T

A

≤ +85 C, unless otherwise noted)