STS7PF30L datasheet(3/11 Pages) STMICROELECTRONICS

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STS7PF30L

2 Electrical characteristics

3/11

Electrical characteristics

(TJ = 25 °C unless otherwise specified)

Table 3.

On/off states

Table 4.

Dynamic

Table 5.

Switching times

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown

Voltage

ID = 250µA, VGS= 0

IDSS

Zero Gate Voltage Drain

Current (VGS = 0)

VDS = Max Rating,

VDS = Max Rating, Tc=125°C

µA

IGSS

Gate Body Leakage Current

(VDS = 0)

VDS = ± 16V

±100

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID = 250µA

11.6

2.5

RDS(on)

Static Drain-Source On

Resistance

VGS= 10 V, ID= 3.5A

VGS= 4.5 V, ID = 3.5A

0.011

0.016

0.022

0.021

0.028

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs Note 3

Forward Transconductance

VDS = 20V, ID= 3.5A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS = 25V, f = 1MHz, VGS =0

2600

523

174

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD= 15V, ID= 7A,

VGS= 4.5V

8.75

12.35

7nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 15V, ID = 3.5A

RG= 4.7Ω, VGS= 4.5V,

(see Figure 13)

td(off)

Turn-off Delay Time

Fall Time

VDD = 15V, ID = 3.5A

RG= 4.7Ω, VGS= 4.5V,

(see Figure 13)

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