STD5N20L datasheet(2/10 Pages) STMICROELECTRONICS

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STD5N20L

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

Table 4: Thermal Data

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: On/Off

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

200

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

200

VGS

Gate- source Voltage

±20

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

3.6

IDM ( )

Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

0.27

W/°C

Tstg

Storage Temperature

–55 to 150

°C

Operating Junction Temperature

Rthj-case

Thermal Resistance Junction-case Max

3.75

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

100

°C/W

Maximum Lead Temperature For Soldering Purpose

275

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

200

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

1µA

VDS= Max Rating, TC= 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ±20V

±100

VGS(th)

Gate Threshold Voltage VDS = VGS, ID = 50µA

12.5

RDS(on)

Static Drain-source On

Resistance

VGS = 5 V, ID = 2.5 A

0.65

0.7

Ω

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