STD5N20L datasheet(3/10 Pages) STMICROELECTRONICS

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STD5N20L

Table 6: Dynamic

Table 7: Source Drain Diode

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Starting Tj =25 °C, Id = 5 A, VDD = 50 V

(*) Pulse width limited by safe operating area

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (2)

Forward Transconductance

VDS = 15 V, ID = 5 A

6.5

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

242

td(on)

td(off)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 100 V, ID = 2.5 A

RG = 4.7Ω, VGS = 5V

(Resistive Load see Figure 14)

11.5

21.5

15.5

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 160 V, ID = 5 A,

VGS = 5V

1.5

6nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

ISDM (*)

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD = 5 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 5 A, di/dt = 100 A/µs,

VDD = 100 V, Tj = 25°C

(see test circuit, see Figure 15)

237

5.1

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 5 A, di/dt = 100 A/µs,

VDD = 100 V, Tj = 150°C

(see test circuit, see Figure 15)

286

5.9

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