G080P06M

www.gofordsemi.com

TEL：0755-29961263

FAX:0755-29961466(A1721-V1.0)

Typical Characteristics TJ = 25ºC, unless otherwise noted

0

20

40

60

80

100

120

0

1

2

3

4

-10V

-5.5V

-5V

-4.5V

-4V

VGS=-3.5V

0

20

40

60

80

100

120

0

2

4

6

8

VDS= -5V

25℃

0

2000

4000

6000

8000

10000

12000

14000

16000

18000

20000

0

10

20

30

40

50

60

Ciss

Coss

Crss

0

2

4

6

8

10

0

50

100

150

200

VDD = -30V,

ID = -20A

0

2

4

6

8

10

12

0

10

20

30

40

VGS= -10V

Figure 3.Drain Source On Resistance

Figure 4. Gate Charge

Figure 5. Capacitance

Figure 6. Source-Drain Diode Forward

-VDS, Drain-to-Source Voltage (V)

-VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

-VDS Drain-Source Voltage(V)

-VSD, Source-to-Drain Voltage (V)

-ID-Drain Current (A)

Qg Gate Charge（nC）