G080P06M

www.gofordsemi.com

TEL：0755-29961263

FAX:0755-29961466(A1721-V1.0)

Absolute Maximum Ratings TC = 25ºC, unless otherwise noted

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

-60

V

Continuous Drain Current

ID

-195

A

Pulsed Drain Current

(note1)

IDM

-780

A

Gate-Source Voltage

VGS

±

20

V

Power Dissipation

PD

294

W

Single pulse avalanche energy

（

note2）

EAS

506

mJ

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 To 150

ºC

Thermal Resistance

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-Ambient

RthJA

65

ºC/W

Maximum Junction-to-Case

RthJC

0.42

ºC/W

P-Channel Enhancement Mode Power MOSFET

Description

The G080P06M uses advanced trench technology to

provide excellent RDS(ON) , low gate charge. It can be used in

a wide variety of applications.

General Features

l

VDS

-60V

l

ID (at VGS = -10V)

-195A

l

RDS(ON) (at VGS = -10V)

< 7.5mΩ

l

100% Avalanche Tested

l

RoHS Compliant

Application

l

Power switch

l

DC/DC converters

Ordering Information

Device

Package

Marking

Packaging

G080P06M

TO-263

G080P06

800pcs/Reel

Schematic diagram

TO-263