Rev 1.0

31/01/25

General purpose high voltage amplifier in bare die form

Complement to PNP 2N5401

NPN Transistor Bare Die, 2N3501

Features:

Die Dimensions in µm (mils)

660 (25.98)

100

(3.94)

100

(3.94)

E

B

B

E



High Breakdown Voltage



Low VCE(sat)



Characterized at temperature extremes



High Reliability Gold Back Metal



High Reliability tested grades for Military + Space

Ordering Information:

The following part suffixes apply:



No suffix - MIL-STD-750 /2072 Visual Inspection



“H” - MIL-STD-750 /2072 Visual Inspection

+ MIL-STD-38534 Class H LAT



“K” - MIL-STD-750 /2072 Visual Inspection

+ MIL-STD-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

E = EMITTER B = BASE

DIE BACK = COLLECTOR

Supply Formats:

Mechanical Specification



Default – Die in Waffle Pack (400 per tray capacity)



Sawn Wafer on Tape – Specific request



Unsawn Wafer – Specific request



With additional electrical selection – Specific request



Sawn as pairs or adjacent pair pick – Specific request

Die Size

(Excluding Saw Street)

660 x 660

25.98 x 25.98

µm

mils

Base & Emitter Pad Size

100 x 100

3.94 x 3.94

µm

mils

Die Thickness

230 (±20)

9.06 (±0.79)

µm

mils

Top Metal Composition

Al - 2.6µm

Back Metal Composition

AuAs - 0.9µm

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