Absolute Maximum Ratings T

A = 25°C unless otherwise stated

Rev 1.0

31/01/25

NPN Transistor Bare Die, 2N3501

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

150

V

Collector-Emitter Voltage

VCEO

150

V

Emitter-Base Voltage

VEBO

6

V

Collector Current

IC

300

mA

Junction & Storage Temperature

TJ , Tstg

150

°C

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

V(BR)CBO

IC = 10µA

150

-

-

V

Collector-Emitter Breakdown Voltage

1

V(BR)CEO

IC = 10mA

150

-

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE = 10µA

6

-

-

V

VCB = 75V

-

-

50

nA

Collector Cut-off Current

ICBO

VCB = 150V

-

-

10

µA

VEB = 4V

-

-

25

nA

Emitter Cut-off Current

IEBO

VEB = 6V

-

-

10

µA

ON CHARACTERISTICS

1

VCE = 10V, IC = 0.1mA

35

-

-

-

VCE = 10V, IC = 1mA

50

-

-

-

VCE = 10V, IC = 10mA

75

-

-

-

VCE = 10V, IC = 150mA

100

-

300

-

Forward-Current Transfer Ratio

hFE

VCE = 10V, IC = 300mA

20

-

-

-

IC = 10mA, IB = 1mA

-

-

0.2

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 150mA, IB = 15mA

-

-

0.4

V

IC = 10mA, IB = 1mA

-

-

0.8

V

Base Saturation Voltage

VBE(sat)

IC = 150mA, IB = 15mA

-

-

1.2

V

SMALL SIGNAL CHARACTERISTICS

2

Forward Current Transfer Ratio

|hfe|

VCE = 20V, IC = 20mA, f = 100MHz

1.5

-

8.0

-

Output Capacitance

Cobo

VCB = 10V,IE = 0, 100kHz ≤ f ≤ 1MHz

-

-

8.0

pF

Input Capacitance

Cibo

VEB = 0.5V,IC = 0, 100kHz ≤ f ≤ 1MHz

-

-

80

pF

SWITCHING CHARACTERISTICS

2

Turn-On Time

ton

VEB = 5V, IC = 150mA, IB1 = 15 mA

-

-

115

ns

Turn-Off Time

toff

IC = 150mA, IB1 = IB2 = -15mA

-

-

1150

ns

Electrical Characteristics T

A = 25°C unless otherwise stated

1. Pulse Test: pulse width = 300µs, duty cycle < 2.0% 2. Not production testing in die form, characterized by chip design & package verification.

Page 2 of 3

www.siliconsupplies.com