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NPN Transistor Bare Die, MMBTA28

Darlington construction transistor in bare die form



Collector current up to 0.8A



Very high current gain



Enables high impedance circuitry



Gold back metal



High reliability tested grades for Military + Space

Rev 1.0

26/11/24

Features:

Die Dimensions in µm (mils)

680 (26.77)

106

(4.17)

DIE BACK = COLLECTOR

Ordering Information:

The following part suffixes apply:



No suffix - Commercial grade die



“H” – Hi-rel grade die + MIL-STD-38534 Class H LAT



“K” – Hi-rel grade die + MIL-STD-38534 Class K LAT.

LAT = Lot acceptance Test.

For information on Hi-Rel LAT flows please see below.

www.siliconsupplies.com\bare-die-lot-qualification

Supply Formats:

Mechanical Specification



Default – Die in Waffle Pack (400 per tray capacity)



Sawn Wafer on Tape – Specific request



Unsawn Wafer – Specific request



With additional electrical selection – Specific request



Sawn as pairs or adjacent pair pick – Specific request

108

(4.25)

B

E

Die Size

(Excluding Saw Street)

680 x 680

26.77 x 26.77

µm

mils

Base Pad Size

106 x 106

4.17 x 4.17

µm

mils

Emitter Pad Size

108 x 108

4.25 x 4.25

µm

mils

Die Thickness

230 (±20)

9.06 (±0.79)

µm

mils

Top Metal Composition

Al - 2µm

Back Metal Composition

AuAs - 0.9µm