| Electronic Components Datasheet Search |
|
CT230802 Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
|
|
|||||||||||||||||||||||||||||
CT230802 Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
|
2 / 4 page ![]() SD-38 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CT230802 Split Dual SCR POW-R-BLOK™ Modules 20 Amperes/800 Volts Absolute Maximum Ratings Characteristics Symbol CT230802 Units Peak Forward Blocking Voltage VDRM 800 Volts Transient Peak Forward Blocking Voltage (Non-Repetitive), t < 5ms VDSM 960 Volts DC Forward Blocking Voltage VD(DC) 640 Volts Peak Reverse Blocking Voltage VRRM 800 Volts Transient Peak Reverse Blocking Voltage (Non-Repetitive), t < 5ms VRSM 960 Volts DC Reverse Blocking Voltage VR(DC) 640 Volts RMS On-State Current IT(RSM) 30 Amperes Average On-State Current, TC = 87°C IT(AV) 20 Amperes Peak One-Cycle Surge (Non-Repetitive) On-State Current (60Hz) ITSM 400 Amperes Peak One-Cycle Surge (Non-Repetitive) On-State Current (50Hz) ITSM 365 Amperes I2t (for Fusing), 8.3 milliseconds I2t 670 A2sec Critical Rate-of-Rise of On-State Current* di/dt 100 Amperes/ s Peak Gate Power Dissipation PGM 5.0 Watts Average Gate Power Dissipation PG(AV) 0.5 Watts Peak Forward Gate Voltage VGFM 10 Volts Peak Reverse Gate Voltage VGRM 5.0 Volts Peak Forward Gate Current IGFM 2.0 Amperes Storage Temperature TSTG -40 to 125 °C Operating Temperature Tj -40 to 125 °C Maximum Mounting Torque M5 Mounting Screw — 17 in.-lb. Maximum Mounting Torque M4 Terminal Screw — 12 lb.-in. Module Weight (Typical) — 80 Grams V Isolation VRMS 2000 Volts *Tj = 125°C, IG = 0.5A, VD = 1/2 VDRM Electrical and Thermal Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions CT230802 Units Blocking State Maximums Forward Leakage Current, Peak IDRM Tj = 125°C, VDRM = Rated 4.0 mA Reverse Leakage Current, Peak IRRM Tj = 125°C, VRRM = Rated 4.0 mA Conducting State Maximums Peak On-State Voltage VTM ITM = 60A 1.8 Volts Switching Minimums Critical Rate-of-Rise of Off-State Voltage dv/dt Tj = 125°C, VD = 2/3 VDRM 500 Volts/ s Thermal Maximums Thermal Resistance, Junction-to-Case R (J-C) Per Module 1.0 °C/Watt Thermal Resistance, Case-to-Sink (Lubricated) R (C-S) Per Module 0.25 °C/Watt Gate Parameters Maximums Gate Current-to-Trigger IGT VD = 6V, RL = 2Ω 50 mA Gate Voltage-to-Trigger VGT VD = 6V, RL = 2Ω 3.0 Volts Non-Triggering Gate Voltage VGDM Tj = 125°C, VD = 1/2 VDRM 0.25 Volts |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |