BF992 datasheet(5/9 Pages) NXP

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NXP Semiconductors

Product speciﬁcation

Silicon N-channel dual gate MOS-FET

BF992

Fig.3 Output characteristics; typical values.

handbook, halfpage

MGE797

010

2468

VDS (V)

(mA)

0.1 V

0 V

−0.5 V

−0.6 V

−0.4 V

−0.3 V

−0.2 V

−0.1 V

VG1-S = 0.2 V

VG2-S = 4 V; Tj =25 °C.

Fig.4 Transfer characteristics; typical values.

handbook, halfpage

−11

MGE799

4 V

3 V

2 V

1 V

0 V

VG2-S = 5 V

VG1-S (V)

(mA)

VDS = 10 V; Tj =25 °C.

Fig.5

Forward transfer admittance as a function

of drain current; typical values.

handbook, halfpage

020

MGE798

ID (mA)

1 V

5 V

2 V

3 V

4 V

VG2-S = 0 V

|yfs|

(mS)

VDS = 10 V; Tj =25 °C.

Fig.6

Forward transfer admittance as a function

of gate 1-source voltage; typical values.

handbook, halfpage

−11

MGE800

Yfs

(mS)

4 V

5 V

3 V

2 V

1 V

0 V

VG2-S =

VG1-S (V)

VDS = 10 V; Tj =25 °C.

Rev. 04 - 21 November 2007

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