BF992 datasheet(6/9 Pages) NXP

6 / 9 page

NXP Semiconductors

Product speciﬁcation

Silicon N-channel dual gate MOS-FET

BF992

Fig.7

Input admittance as a function of frequency;

typical values.

VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb =25 °C.

handbook, halfpage

MGE794

102

10−2

102

103

10−1

bis

gis

yis

(mS)

f (MHz)

handbook, halfpage

MGE793

10−1

10−2

102

103

bos

gos

yos

(mS)

f (MHz)

VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb =25 °C.

Fig.8

Output admittance as a function of

frequency; typical values.

Fig.9

Forward transfer admittance as a function

of frequency; typical values.

handbook, halfpage

MGE795

102

103

Yfs

(mS)

f (MHz)

−bfs

gfs

VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb =25 °C.

Fig.10 Reverse transfer admittance as a function

of frequency; typical values.

handbook, halfpage

120

MGE796

102

103

yrs

(

µS)

grs

−brs

f (MHz)

VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb =25 °C.

Rev. 04 - 21 November 2007

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