TPCP8501 datasheet(2/5 Pages) TOSHIBA

2 / 5 page

TPCP8501

2006-11-13

Figure 1. Circuit configuration (top view)

Figure 2. Marking (Note 4)

Note 4: ● on lower left on the marking indicates Pin 1.

※

Weekly code: (Three digits)

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 180 V, IE = 0

⎯

100

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

⎯

100

Collector-base breakdown voltage

V (BR) CBO

IC = 1 mA, IB = 0

180

⎯

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

100

⎯

hFE (1)

VCE = 2 V, IC = 0.3 A

100

⎯

300

DC current gain

hFE (2)

VCE = 2 V, IC = 1.0 A

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = 1 A, IB = 33 mA

⎯

0.2

Base-emitter saturation voltage

VBE (sat)

IC = 1 A, IB = 33 mA

⎯

1.1

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1MHz

⎯

Rise time

⎯

Storage time

tstg

⎯

1.4

⎯

Switching time

Fall time

See Figure 3 circuit diagram

VCC ∼− 50 V, RL = 50 Ω

IB1 = −IB2 = 33 mA

⎯

100

⎯

Figure 3. Switching Time Test Circuit & Timing Chart

IB1

μs

IB2

IB1

IB2

Input

Output

VCC

Duty cycle ＜1%

Type

Lot No.

(Weekly code)

※

8501

8　 7 　6 　 5

1　 2　 3　 4

8　 7 　6 　 5

Week of manufacture

(01 for first week of year, continues up to 52 or 53)

Year of manufacture

(One low-order digits of calendar year)

TPCP8501 Datasheet(PDF) 2 Page - Toshiba Semiconductor

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