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GD400HTX75P7H Datasheet(PDF) 4 Page - StarPower Europe AG |
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GD400HTX75P7H Datasheet(HTML) 4 Page - StarPower Europe AG |
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4 / 9 page ![]() GD400HTX75P7H IGBT Module ©2023 STARPOWER Semiconductor Ltd. 5/19/2023 4/9 A05 Diode Characteristics T F=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VF Diode Forward Voltage IF=400A,VGE=0V,Tvj=25 oC 1.55 2.00 V IF=400A,VGE=0V,Tvj=150 oC 1.50 IF=400A,VGE=0V,Tvj=175 oC 1.50 Qr Recovered Charge VR=400V,IF=400A, -di/dt=6120A/μs,VGE=-15V Tvj=25 oC 7.90 μC IRM Peak Reverse Recovery Current 192 A Erec Reverse Recovery Energy 3.66 mJ Qr Recovered Charge VR=400V,IF=400A, -di/dt=5450A/μs,VGE=-15V Tvj=150 oC 20.1 μC IRM Peak Reverse Recovery Current 240 A Erec Reverse Recovery Energy 7.10 mJ Qr Recovered Charge VR=400V,IF=400A, -di/dt=5270A/μs,VGE=-15V Tvj=175 oC 24.2 μC IRM Peak Reverse Recovery Current 258 A Erec Reverse Recovery Energy 8.16 mJ NTC Characteristics T F=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit R25 Rated Resistance 5.0 kΩ ∆R/R Deviation of R100 TC=100 oC,R100=493.3Ω -5 5 % P25 Power Dissipation 20.0 mW B25/50 B-value R2=R25exp[B25/50(1/T2- 1/(298.15K))] 3375 K B25/80 B-value R2=R25exp[B25/80(1/T2- 1/(298.15K))] 3411 K B25/100 B-value R2=R25exp[B25/100(1/T2- 1/(298.15K))] 3433 K Module Characteristics T F=25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit ∆P Pressure Drop Cooling Circuit ∆V/∆t=10.0dm3/min;TF=25 oC; Cooling Fluid=50%Water/50%Ethylene Glycol 50 mbar P Maximum Pressure In Cooling Circuit 2.0 bar RthJF Junction-to-Cooling Fluid (per IGBT) Junction-to-Cooling Fluid (per Diode) 0.207 0.291 K/W M Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5 3.0 3.0 6.0 6.0 N.m G Weight of Module 685 g |
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