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Axelite Confidential Materials, do not copy or distribute without written consent.

Rev.1.0 Apr.29, 2019

AM6008S



Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ. Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

100

---

---

V

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=10V , ID=13.5A

---

6.6

8

m



Static Drain-Source On-Resistance

2

VGS=4.5V , ID=11.5A

---

8.7

10.5

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

---

2.3

V

IDSS

Drain-Source Leakage Current

VDS=80V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=80V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=13.5A

---

75

---

S

Qg

Total Gate Charge (10V)

VDS=50V , VGS=10V ,

ID=13.5A

---

45

---

nC

Qg

Total Gate Charge (4.5V)

---

19.3

---

Qgs

Gate-Source Charge

---

9.5

---

Qgd

Gate-Drain Charge

---

4.8

---

Td(on)

Turn-On Delay Time

VDD=50V , VGS=10V ,

RG=3

, ID=13.5A

---

10

---

ns

Tr

Rise Time

---

6.5

---

Td(off)

Turn-Off Delay Time

---

45

---

Tf

Fall Time

---

7.5

---

Ciss

Input Capacitance

VDS=50V , VGS=0V ,

f=1MHz

---

3320

---

pF

Coss

Output Capacitance

---

605

---

Crss

Reverse Transfer Capacitance

---

20

---



Diode Characteristics

Symbol

Parameter

Conditions

Min.

Typ. Max.

Unit

IS

Continuous Source Current

1,5

VG=VD=0V , Force Current

---

---

5

A

VSD

Diode Forward Voltage

2

VGS=0V , IS=1A , TJ=25℃

---

---

1.1

V

trr

Reverse Recovery Time

IF=13.5A , di/dt=100A/µs ,

TJ=25℃

---

33

---

nS

Qrr

Reverse Recovery Charge

---

150

---

nC

Note :

1.The data tested by surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.3mH,IAS=15A

4.The power dissipation is limited by 150℃ junction temperature

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.