STP8NM60D datasheet(3/13 Pages) STMICROELECTRONICS

3 / 13 page

STB8NM60D - STP8NM60D

Electrical characteristics

Rev2

3/13

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test Condictions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown

Voltage

ID = 250µA, VGS= 0

600

IDSS

Zero Gate Voltage Drain

Current (VGS = 0)

VDS = Max Rating,

VDS = Max Rating,Tc=125°C

µA

IGSS

Gate Body Leakage Current

(VDS = 0)

VGS = ±30V, VDS = 0

100

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID = 250µA

345

RDS(on)

Static Drain-Source On

Resistance

VGS= 10V, ID=2.5A

0.9

Ω

Table 5.

Dynamic

Symbol

Parameter

Test Condictions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward Transconductance

VDS =ID(on) x RDS(on)max

ID = 2.5A

2.4

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS =25V, f=1 MHz, VGS=0

380

170

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent Ouput

Capacitance

VGS=0, VDS =0V to 480V

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD=400V, ID = 5A

VGS =10V

(see Figure 13)

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