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STP8NM60D Datasheet(PDF) 4 Page - STMicroelectronics

Part # STP8NM60D
Description  N-CHANNEL 600V - 0.9廓 - 8A - TO-220/D2PAK Fast Diode MDmesh??Power MOSFET
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP8NM60D Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB8NM60D - STP8NM60D
4/13
Rev2
Table 6.
Switching times
Symbol
Parameter
Test Condictions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD=300V, ID=2.5A,
RG=4.7Ω, VGS=10V
(see Figure 12)
13
10
26
8
ns
ns
ns
ns
td(off)
tf
tc
Turn-off Delay Time
Fall Time
Cross-over Time
VDD=480V, ID=5A,
RG=4.7Ω, VGS=10V
(see Figure 12)
8
8
14
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test Condictions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain Current
Source-drain Current
(pulsed)
5
20
A
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on Voltage
ISD=5A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=5A, di/dt = 100A/µs,
VDD=50 V, Tj=25°C
107
330
6
ns
nC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=5A, di/dt = 100A/µs,
VDD=50 V, Tj=150°C
178
640
7
ns
nC
A



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