2SC2715 datasheet(1/8 Pages) TOSHIBA

Part #	2SC2715

Description	Silicon NPN Epitaxial Planar Type (PCT process)

PDF	8 Pages

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2SC2715

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)

2SC2715

High Frequency Amplifier Applications

• High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz)

• Recommended for FM IF, OSC stage and AM CONV. IF stage.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

35

V

Collector-emitter voltage

VCEO

30

V

Emitter-base voltage

VEBO

4

V

Collector current

IC

50

mA

Base current

IB

10

mA

Collector power dissipation

PC

150

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 35 V, IE = 0

⎯

0.1

μA

Emitter cut-off current

IEBO

VEB = 4 V, IC = 0

⎯

1.0

μA

DC current gain

hFE

(Note)

VCE = 12 V, IC = 2 mA

40

⎯

240

Collector-emitter saturation voltage

VCE (sat)

IC = 10 mA, IB = 1 mA

⎯

0.4

V

Base-emitter voltage

VBE

IC = 10 mA, IB = 1 mA

⎯

1.0

V

Transition frequency

fT

VCE = 10 V, IC = 1 mA

100

⎯

400

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

⎯

2.0

3.2

pF

Collector-base time constant

Cc･rbb’

VCE = 10 V, IE = −1 mA, f = 30 MHz

⎯

50

ps

Power gain

Gpe

VCC = 6 V, IE = −1 mA, f = 10.7 MHz

(Figure 1)

27

30

33

dB

Note: hFE classification R: 40~80, O: 70~140, Y: 120~240

Unit: mm

JEDEC

―

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

USM

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