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2SC2715 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC2715 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 8 page ![]() 2SC2715 2007-11-01 2 y Parameter (typ.) (1) (common emitter f = 455 kHz, Ta = 25°C) Characteristics Symbol 2SC2715-R 2SC2715-O 2SC2715-Y Unit Collector-emitter voltage VCE 6 6 6 V Emitter current IE −1 −1 −1 mA Input conductance gie 0.58 0.41 0.26 mS Input capacitance Cie 53 46 38 pF Output conductance goe 1.9 2.7 4.8 μS Output capacitance Coe 2.6 2.8 3.6 pF Forward transfer admittance ⎪yfe⎪ 38 38 38 mS Phase angle of forward transfer admittance θfe −0.79 −0.83 −0.92 ° Reverse transfer admittance ⎪yre⎪ 5.7 5.7 6.2 μS Phase angle of reverse transfer admittance θre −90 −90 −90 ° (2) (common emitter f = 10.7 MHz, Ta = 25°C) Characteristics Symbol 2SC2715-R 2SC2715-O 2SC2715-Y Unit Collector-emitter voltage VCE 6 6 6 V Emitter current IE −1 −1 −1 mA Input conductance gie 1.04 0.85 0.65 mS Input capacitance Cie 49 43 36 pF Output conductance goe 10 15 28 μS Output capacitance Coe 2.7 2.9 3.6 pF Forward transfer admittance ⎪yfe⎪ 37 37 37 mS Phase angle of forward transfer admittance θfe −9.6 −10.4 −11.5 ° Reverse transfer admittance ⎪yre⎪ 120 120 140 μS Phase angle of reverse transfer admittance θre −90 −90 −90 ° |
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