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2SC6061 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC6061 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() 2SC6061 2006-11-13 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Collector cut-off current ICBO VCB = 180 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 100 nA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IB = 0 180 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 120 ― ― V hFE (1) VCE = 2 V, IC = 1 mA 100 ― ― hFE (2) VCE = 2 V, IC = 0.1 A 120 ― 300 DC current gain hFE (3) VCE = 2 V, IC = 0.3 A 60 ― ― Collector emitter saturation voltage VCE (sat) IC = 0.3 A, IB = 0.01 A ― ― 0.14 V Base-emitter saturation voltage VBE (sat) IC = 0.3 A, IB = 0.01 A ― ― 1.1 V Rise time tr ― 0.1 ― Storage time tstg ― 1.5 ― Switching time Fall time tf See Figure 3 circuit diagram VCC≒72 V, RL = 24 Ω IB1 = −IB2 = 10 mA ― 0.2 ― μs Figure 3 Switching Time Test Circuit & Timing Chart Marking IB2 IB1 20 μs Output Input IB2 IB1 VCC Duty cycle < 1% W N Part No. (or abbreviation code) Lot code (month) Lot code (year) Dot: even year No dot: odd year |
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