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2SC6061 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SC6061
Description  Silicon NPN Epitaxial Type
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC6061 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SC6061
2006-11-13
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 180 V, IE = 0
―
―
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
―
100
nA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IB = 0
180
―
―
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
120
―
―
V
hFE (1)
VCE = 2 V, IC = 1 mA
100
―
―
hFE (2)
VCE = 2 V, IC = 0.1 A
120
―
300
DC current gain
hFE (3)
VCE = 2 V, IC = 0.3 A
60
―
―
Collector emitter saturation voltage
VCE (sat)
IC = 0.3 A, IB = 0.01 A
―
―
0.14
V
Base-emitter saturation voltage
VBE (sat)
IC = 0.3 A, IB = 0.01 A
―
―
1.1
V
Rise time
tr
―
0.1
―
Storage time
tstg
―
1.5
―
Switching time
Fall time
tf
See Figure 3 circuit diagram
VCC≒72 V, RL = 24 Ω
IB1 = −IB2 = 10 mA
―
0.2
―
μs
Figure 3 Switching Time Test Circuit & Timing Chart
Marking
IB2
IB1
20
μs
Output
Input
IB2
IB1
VCC
Duty cycle
< 1%
W N
Part No. (or abbreviation code)
Lot code (month)
Lot code (year)
Dot: even year
No dot: odd year



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