2SJ313 datasheet(2/5 Pages) TOSHIBA

2 / 5 page

2SJ313

2006-11-16

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VDS = 0, VGS = ±20 V

―

±100

Drain−source breakdown voltage

V (BR) DSS

ID = −10 mA, VGS = 0

−180

―

Gate−source cut−off voltage (Note 2)

VGS (OFF)

VDS = −10 V, ID = −10 mA

−0.8

―

−2.8

Drain−source saturation voltage

VDS (ON)

ID = −0.6 A, VGS = −10 V

―

−1.2

−3.0

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −0.3 A

―

0.7

―

Input capacitance

Ciss

―

210

―

Output capacitance

Coss

―

Reverse transfer capacitance

Crss

VDS = −10 V, VGS = 0, f = 1 MHz

―

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VGS (OFF) Classification

O: −0.8~−1.6,

Y: −1.4~−2.8

This transistor is the electrostatic-sensitive device.

Please handle with caution.

Marking

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

J313

Part No. (or abbreviation code)

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