MP6301

2006-10-27

1

TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type

(Six Darlington Power Transistors inOne)

MP6301

High Power Switching Applications

3-Phase Motor Drive and Bipolar Drive of Pulse Motor

• Small package by full molding (SIP 12 pins)

• High collector power dissipation (6-device operation)

Rating

Characteristics

Symbol

NPN

PNP

Unit

Collector-base voltage

100

−100

V

Collector-emitter voltage

80

−80

V

Emitter-base voltage

8

−8

V

DC

3

−3

Collector current

Pulse

5

−5

A

Continuous base current

0.5

−0.5

A

Collector power dissipation

(1-device operation)

2.0

W

Collector power dissipation

(6-device operation)

4.4

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Array Configuration

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-32C1F

Weight: 3.9 g (typ.)

2

1

R1 R2

11

R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω

5

8

10

7

4

3

6

9

12

R1 R2