MP6301 datasheet(3/4 Pages) TOSHIBA

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MP6301

2006-10-27

Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward current

IFM

―

Surge current

IFSM

t = 1 s, 1 shot

―

Forward voltage

IF = 1 A, IB = 0 A

―

2.0

Reverse recovery time

trr

―

μs

Reverse recovery charge

Qrr

IF = 3 A, VBE = −3 V, dIF/dt = −50 A/μs

―

μC

Electrical Characteristics (Ta = 25°C) (PNP transistor)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = −100 V, IE = 0 A

―

−20

μA

Collector cut-off current

ICEO

VCE = −80 V, IB = 0 A

―

−20

μA

Emitter cut-off current

IEBO

VEB = −8 V, IC = 0 A

−0.8

―

−4.0

Collector-base breakdown voltage

V (BR) CBO

IC = −1 mA, IE = 0 A

−100

―

Collector-emitter breakdown voltage

V (BR) CEO

IC = −10 mA, IB = 0 A

−80

―

hFE (1)

VCE = −2 V, IC = −1 A

2000

―

DC current gain

hFE (2)

VCE = −2 V, IC = −2 A

1000

―

Collector-emitter

VCE (sat)

IC = −2 A, IB = −4 mA

―

−1.8

Saturation voltage

Base-emitter

VBE (sat)

IC = −2 A, IB = −4 mA

―

−2.3

Transition frequency

VCE = −2 V, IC = −0.5 A

―

MHz

Collector output capacitance

Cob

VCB = −10 V, IE = 0 A, f = 1 MHz

―

Turn-on time

ton

―

0.4

―

Storage time

tstg

―

1.8

―

Switching time

Fall time

−IB1 = IB2 = 4 mA, duty cycle ≤ 1%

―

0.4

―

μs

Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward current

IFM

―

Surge current

IFSM

t = 1 s, 1 shot

―

Forward voltage

IF = 1 A, IB = 0 A

―

2.0

Reverse recovery time

trr

―

500

―

μs

Reverse recovery charge

Qrr

IF = 3 A, VBE = 3 V, dIF/dt = −50 A/μs

―

2.7

―

μC

20 μs

VCC = −30 V

Output

IB1

IB2

Input

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