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CRF02 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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CRF02 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page ![]() CRF02 2006-11-07 1 TOSHIBA Fast Recovery Diode Silicon Diffused Type CRF02 Power Supply Applications Strobo Flasher Applications • Repetitive peak reverse voltage: VRRM = 800 V • Average forward current: IF (AV) = 0.5 A • Low forward voltage: VFM = 3.0 V (max.) • Very fast reverse-recovery time: trr = 100 ns (max.) • Suitable for compact assembly due to its small surface-mount package, the “S−FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 800 V Average forward current IF(AV) 0.5 (Note 1) A Peak one-cycle surge forward current (non-repetitive) IFSM 10 (50 Hz) A Junction temperature Tj −40~150 °C Storage temperature range Tstg −40~150 °C Note 1: Ta = 84°C: Device mounted on a ceramic board Board size: 50 mm × 50 mm, Soldering Land size: 2 mm × 2 mm Board thickness: 0.64 t Rectangular waveform (α = 180°) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 3-2A1A Weight: 0.013 g (typ.) |
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