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TLP209D Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TLP209D Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page ![]() TLP209D 2007-10-01 1 TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP209D MEASUREMENT INSTRUMENTS LOGIC IC TESTERS / MEMORY TESTERS BOARD TESTERS / SCANNERS The TOSHIBA TLP209D consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package. Its characteristics include low OFF-state current and low output pin capacitance, enabling it to be used in high-frequency measurement instruments. Features • 8 pin SOP (2.54SOP8) : 2.1 mm high, 2.54 mm pitch • 2-Form-A • Peak Off-State Voltage : 200 V (min) • Trigger LED Current : 3 mA (max) • On-State Current : 50 mA (max) • On-State Resistance : 50 ohm (max) • Output Capacitance : 20 pF (max) • Isolation Voltage : 1500 Vrms (min) Pin Configuration (top view) Schematic 1 2 8 7 3 4 6 5 1, 3 : ANODE 2, 4 : CATHODE 5 : DRAIN D1 6 : DRAIN D2 7 : DRAIN D3 8 : DRAIN D4 1 2 8 7 3 4 6 5 Unit: mm JEDEC EIAJ TOSHIBA 11 −10H1 Weight: 0.2 g |
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