TA8409SSLASHSG datasheet(4/13 Pages) TOSHIBA

4 / 13 page

TA8409S/SG, F/FG

2006-3-2

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Supply voltage

VCC

Motor drive voltage

Reference voltage

Vref

PEAK

IO (PEAK)

1.0

Output current

AVE.

IO (AVE.)

0.4

TA8409F/FG

0.735 (Note)

Power dissipation

TA8409S/SG

0.95

Operating temperature

Topr

−30 to 75

°C

Storage temperature

Tstg

−55 to 150

°C

Note:

This rating is obtained by mounting on 50 × 50 × 1.6 mm PCB that occupied above 30% of copper area.

Electrical Characteristics (Ta = 25°C, VCC = 12 V, VS = 18 V)

Characteristics

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

ICC1

Output OFF, CW/CCW mode

―

10.0

15.0

ICC2

Output OFF, STOP mode

―

µA

Supply current

ICC3

Output OFF, BREAK mode

―

6.5

10.0

1 (High)

VIN 1

Tj = 25°C IN1, 2

3.5

―

5.5

Input operating

voltage

2 (Low)

VIN 2

Tj = 25°C IN1, 2

GND

―

0.8

Input current

IIN

Sink mode, VIN = 3.5 V

―

µA

Input hysteresis voltage

∆VT

―

0.7

―

Upper side

VSAT U−1

Vref = VS, VOUT−VS measure

IO = 0.2 A, CW/CCW mode

―

0.9

1.2

Lower side

VSAT L−1

Vref = VS, VOUT−GND measure

IO = 0.2 A, CW/CCW mode

―

0.8

1.2

Upper side

VSAT U−2

Vref = VS, VOUT−VS measure

IO = 0.4 A, CW/CCW mode

―

1.0

1.35

Saturation voltage

Lower side

VSAT L−2

Vref = VS, VOUT−GND

measure

IO = 0.4 A, CW/CCW mode

―

0.9

1.35

VSAT U−1’

Vref = 10 V, VOUT−GND

measure

IO = 0.2 A

10.4

11.2

12.2

Output voltage

VSAT U−2’

Vref = 10 V, VOUT−GND

measure

IO = 0.4 A

―

10.9

―

Upper side

ILU

VL = 25 V

―

Output transistor

leakage current

Lower side

ILL

VL = 25 V

―

µA

Upper side

VF U−1

IF = 0.4 A

―

1.5

―

Diode forward voltage

Lower side

VF L−1

IF = 0.4 A

―

0.9

―

Reference current

Iref

Vref = 10 V, source mode

―

µA

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