FN9090 Rev 1.00

Page 2 of 2

February 23, 2012

ISL7124SRH, ISL7124SEH

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Die Characteristics

DIE DIMENSIONS:

2640

m x 5020m (104 mils x 198mils)

Thickness: 483

m  25.4m (19 mils  1 mil)

INTERFACE MATERIALS:

Glassivation:

Type: PSG (Phosphorous Silicon Glass)

Thickness: 8.0kÅ

 1.0kÅ

Top Metallization:

Type: AlSiCu

Thickness: 16.0kÅ

 2kÅ

Substrate:

Radiation Hardened Silicon Gate

Dielectrically Isolated

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (DI)

ADDITIONAL INFORMATION:

Worst Case Current Density:

<2.0 x 105 A/cm2

Transistor Count:

276

Metallization Mask Layout

ISL7124SRH, ISL7124SEH

Layout not yet available.

OUT 1

OUT 2

OUT 3

OUT 4

+IN 1

-IN 1

+VCC

-VCC

+IN 2

+IN 3

-IN 3

+IN 4

-IN 4

-IN 2