50-5000 MHz Flat Gain BroadBand AMP

BBA31

1

Rev. 1.0

BeRex

●website: www.berex.com

●email: sales@berex.com

Specifications and information are subject to change without notice. BeRex is a trademark of BeRex.

All other trademarks are the property of their respective owners. © 2024 BeRex

• Gain = 14.8 dB @ 900MHz

• OIP3 = 40.8 dBm @ 900 MHz

• Output P1 dB = 22.2 dBm @ 900 MHz

• N.F = 1.95dB @ 900 MHz

• Internally matched to 50 ohms

• Green/RoHS2 Compliant DFN 8L 2x2 Package

The BBA31 is a BroadBand, GaAs E-pHEMT Ampli-

fier that is ideal for applications demanding high

linearity and gain flatness in a bandwidth of 50-

5000 MHz. The BBA31 is internally matched to 50

Ohms and requires no external matching compo-

nents. It is available in RoHS2-compliant DFN 8L

2x2 mm

2 Surface mount package. These devices

are 100% DC and RF tested to assure quality and

performance.

Product Description

Device Features

• Repeaters

• Mobile Infrastructure

• Defense/Aerospace

• LTE / WCDMA / EDGE / CDMA

• General Purpose Wireless

• IF amplifier, RF driver amplifier

Applications

Applications Circuit

BOM@GHz

0.05~1.5

0.5~3.0

3.0~5.0

C1

1uF

1uF

1uF

C2

100pF

100pF

100pF

C3

2.2nF

100pF

22pF

C4

2.2nF

100pF

22pF

L1

1uH

22nH

1.0nH

C5

–

–

0.5pF

C6

–

–

0.75pF

Electrical Specifications

Absolute Maximum Ratings

Parameter

Rating

Unit

Storage Temperature

-55 to +155

°C

Junction Temperature

+170

°C

Supply Voltage

+7

V

Supply Current

190

mA

Input RF Power

20

dBm

Operation of this device above any of these parameters may result in permanent damage.

Parameter

Min

Typ

Max

Unit

Bandwidth

50

5000

MHz

Id @ (Vd = 5V)

80

100

120

mA

Vd

4.75

5.0

5.25

V

dG/dT

-0.003

dB/°C

RTH

40.1

°C/W

Operating Case Temperature

-40

+105

°C

Recommended Operating Conditions

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating conditions.

Device performance _ measured on a BeRex evaluation board at 25°C, Vd=5V, 50 Ω system.

Parameter

Conditions

Min

Typ

Max

Unit

Operational

Frequency Range

50

5000

MHz

Test Frequency

900

MHz

Gain

13.7

14.8

dB

Input Return Loss

-14.9

dB

Output Return Loss

-13.0

dB

Output IP3

5 dBm / tone ,

Δf=1 MHz

37.8

40.8

dBm

Output P1dB

21.2

22.2

dBm

LTE 20M ACLR

*

11.9

12.9

dBm

Noise Figure

1.95

2.15

dB

- LTE set-up: 3GPP LTE, FDD E-TM3.1, 20MHz BW, ±20MHz offset, PAR 9.75 at

0.01% Prob.

*ACLR Channel Power measured at -50dBc.