SS8050-HF (NPN)

RoHS Device

General Purpose Transistor

1 : BASE

2 : EMITTER

3 : COLLECTOR

Maximum Ratings (at TA=25°C unless otherwise noted)

VCEO

Emitter-Base voltage

Collector-Emitter voltage

Collector-Base voltage

Collector current

Symbol

Parameter

Value

Unit

V

V

V

5

25

40

IC

1.5

A

300

mW

PC

Collector power dissipation

°C/W

RθJA

417

VCBO

VEBO

°C

-55 to +150

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Max

Unit

Collector-Base breakdown voltage

0.1

IC=100μA, IE=0

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Collector cut-off current

Collector-Emitter saturation voltage

Transition frequency

IC=0.1mA, IB=0

IE=100μA, IC=0

VCB=40V, IE=0

V E=20V, IE=0

C

IC=800mA, IB=80mA

VCE=10V, IC=50mA, f=30MHz

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

VCE(sat)

fT

25

40

5

0.1

0.5

V

V

V

µA

µA

V

MHZ

Base-Emitter saturation voltage

IC=800mA, IB=80mA

VBE(sat)

1.2

V

Typ

DC current gain

VCE=1V, IC=100mA

hFE(1)

350

200

VCE=1V, IC=800mA

hFE(2)

40

100

Emitter cut-off current

VEB=5V, IC=0

IEBO

0.1

µA

Halogen Free

Comchip Technology CO., LTD.

REV:A

Page 1

QW-JTR154

Dimensions in inches and (millimeter)

SOT-23

3

1

2

0.055(1.40)

0.047(1.20)

0.118(3.00)

0.110(2.80)

0.079(2.00)

0.071(1.80)

0.041(1.05)

0.035(0.90)

0.004(0.10)

0.000(0.00)

0.020(0.50)

0.012(0.30)

0.006(0.15)

0.003(0.08)

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

Mechanical Data

- Case: SOT-23, molded plastic.

- Mounting position: Any.

Circuit Diagram

1

Base

2

Emitter

Collector

3

Operation junction and

storage temperature range

TJ, TSTG

Thermal resistance from

junction to ambient